Spintronics (a tehcnology that exploits the spin of an electron as well as its charge) has traditionally relied on ferromagnetic metals, but spin-orbitronics exploits the efficient spin-charge interconversion enabled by spin-orbit coupling in non-magnetic systems. This provides new opportunities for devices, such as the MESO transistor proposed by Intel, that rely on writing of magnetic information through magnetoelectric coupling, and reading it by spin-charge conversion. For the latter, oxide 2DEGs are promising as their spin-charge conversion efficiency is large, a result that was reported in earlier work by researchers in France, Germany and Switzerland.
In new work, published by the same group, in a paper in Nature Materials, the reserchers demonstrate a very large spin to-charge conversion effect in an high carrier-density SrTiO3 2DEG generated by the sputter-deposition of Al at room temperature. They have mapped the dependence of this effect to the band structure (as measured by ARPES). “We show that the conversion process is amplified by enhanced Rashba-like splitting due to orbital mixing, and in the vicinity of avoided band crossings with topologically non-trivial order,” they say. “Our results indicate that oxide 2DEGs are strong candidates for spin-based information readout in novel memory and transistor designs, and emphasize the promise of topology as a new ingredient to expand the scope of complex oxides for spintronics.”
Read the research paper: Mapping spin-charge conversion to the band structure in a topological oxide two-dimensional electron gas. Diogo C. Vaz et al. Nature Materials doi: 10.1038/s41563-019-0467-4
For a news story on this work, please email: firstname.lastname@example.org